Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading-Reference-Cited by-同舟云学术

Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading

Published:2020-10-20 Issue:10 Volume:4 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Skibitzki Oliver^ORCID,Zoellner Marvin H.,Rovaris Fabrizio^ORCID,Schubert Markus Andreas,Yamamoto Yuji,Persichetti Luca^ORCID,Di Gaspare Luciana,De Seta Monica,Gatti Riccardo,Montalenti Francesco,Capellini Giovanni

Funder

Horizon 2020

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.103403/fulltext

Reference38 articles.

1. Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition

2. (Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content

3. Lasing in strained germanium microbridges

4. Strain relaxation in high Ge content SiGe layers deposited on Si

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