Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition-Reference-Cited by-同舟云学术

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

Published:2021 Issue:28 Volume:50 Page:9958-9967
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Lee Seunghwan¹²³⁴^ORCID,Baek GeonHo⁵²³⁴,Kim Hye-mi¹²³⁴,Kim Yong-Hwan⁶⁷⁴,Park Jin-Seong¹²³⁴⁵^ORCID

Affiliation:

1. Division of Materials Science and Engineering

2. Hanyang University

3. Seoul 04763

4. Republic of Korea

5. Division of Nano-Scale Semiconductor Engineering

6. Infovion Inc.

7. Seoul 07286

Abstract

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

Funder

Ministry of Science and ICT, South Korea

Hanyang University

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT01380G

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