Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)-Reference-Cited by-同舟云学术

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Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD)

Published:2022-12-01 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2022
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Author:

Le Dan N.,Hwang Su Min,Woo Jihoon,Choi Seungsoo,Park Taehee,Veyan Jean-Francois,Tiwale Nikhil M.,Subramanian Ashwanth,Lee Won-Il,Nam Chang-Yong,Choi Rino,Kim Jiyoung

Publisher

SPIE

Reference17 articles.

1. Current Challenges and Opportunities for EUV Lithography;Levinson,2018

2. High-NA EUV Lithography Exposure Tool: Program Progress;Van Schoot,2020

3. Continued Scaling in Semiconductor Manufacturing Enabled by Advances in Lithography;van den Brink,2019

4. Progress and challenges of EUV patterning material design;De Silva,2021

5. Progress in EUV resists towards the deployment of high-NA lithography;Allenet,2021

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography;Micromachines;2024-08-31

2. Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications;Japanese Journal of Applied Physics;2023-06-01

3. Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography;Advances in Patterning Materials and Processes XL;2023-05-01

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