Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory-Reference-Cited by-同舟云学术

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

Published:2017 Issue:25 Volume:5 Page:6319-6327
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Su Teng-Yu¹²³⁴,Huang Chi-Hsin¹²³⁴,Shih Yu-Chuan¹²³⁴,Wang Tsang-Hsuan¹²³⁴,Medina Henry¹²³⁴,Huang Jian-Shiou¹²³⁴,Tsai Hsu-Sheng⁵²³⁴^ORCID,Chueh Yu-Lun¹²³⁴⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. National Tsing Hua University

3. Hsinchu

4. Republic of China

5. Institute of Nuclear Engineering and Science

6. School of Material Science and Engineering

Abstract

The role of defect engineering is essential in resistive switching memory.

Funder

Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01130J

Reference54 articles.

1. Nanoionics-based resistive switching memories

2. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

3. Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device

4. Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices

5. Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

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