Role of oxygen vacancy in controlling the resistive switching mechanism for the development of conducting filaments in response of homo and hetero electrodes: Using DFT approach
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Published:2024-10
Issue:
Volume:193
Page:112214
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ISSN:0022-3697
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Container-title:Journal of Physics and Chemistry of Solids
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language:en
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Short-container-title:Journal of Physics and Chemistry of Solids
Author:
Rasheed Umbreen,
Imran Muhammad,
Hussain Fayyaz,
Mumtaz Umair,
Tighezza Ammar MohamedORCID,
Khalil R.M.A.,
Ehsan Muhammad Fahad
Funder
King Saud University