Temperature dependent electronic band structure of wurtzite GaAs nanowires
Author:
Affiliation:
1. Solid State Physics and NanoLund
2. Lund University
3. SE-221 00 Lund
4. Sweden
5. Institut für Festkörperphysik
6. Centre for Analysis and Synthesis
Abstract
Temperature dependence of the indicated transitions in wurtzite GaAs.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR07635E
Reference31 articles.
1. Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism
2. A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow
3. Confinement in Thickness-Controlled GaAs Polytype Nanodots
4. Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
5. Wurtzite GaAs Quantum Wires: One-Dimensional Subband Formation
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