Unveiling Variations in Electronic and Atomic Structures Due to Nanoscale Wurtzite and Zinc Blende Phase Separation in GaAs Nanowires-Reference-Cited by-同舟云学术

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Unveiling Variations in Electronic and Atomic Structures Due to Nanoscale Wurtzite and Zinc Blende Phase Separation in GaAs Nanowires

Published:2024-05-20 Issue:22 Volume:24 Page:6644-6650
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zeng Lunjie¹^ORCID,Olsson Eva¹^ORCID

Affiliation:

1. Department of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

Funder

Vetenskapsr?det

Chalmers Tekniska H?gskola

Knut och Alice Wallenbergs Stiftelse

Stiftelsen f?r Strategisk Forskning

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01262

Reference64 articles.

1. Observation of a Wurtzite Form of Gallium Arsenide

2. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires

3. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

4. Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters

5. Polytype Attainability in III–V Semiconductor Nanowires

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