Confinement in Thickness-Controlled GaAs Polytype Nanodots
Author:
Affiliation:
1. Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
2. also at Centre for Analysis and Synthesis, Lund University, Box 124, 221 00 Lund, Sweden
Funder
German Academic Exchange Service
Knut och Alice Wallenbergs Stiftelse
Vetenskapsrådet
Seventh Framework Programme
Stiftelsen för Strategisk Forskning
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00253
Reference23 articles.
1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
2. One-dimensional Steeplechase for Electrons Realized
3. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
4. High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
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