Electrochemically prepared oxides for resistive switching memories-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electrochemically prepared oxides for resistive switching memories

Published:2019 Issue: Volume:213 Page:165-181
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Zaffora A.¹²³⁴⁵^ORCID,Di Quarto F.¹²³⁴⁵,Habazaki H.⁶⁷⁸⁹,Valov I.¹⁰¹¹¹²¹³¹⁴^ORCID,Santamaria M.¹²³⁴⁵^ORCID

Affiliation:

1. Electrochemical Materials Science Laboratory

2. DICAM

3. Università degli Studi di Palermo

4. Palermo 90128

5. Italy

6. Faculty of Engineering

7. Hokkaido University

8. Sapporo

9. Japan

10. Peter Grünberg Institut

11. Forschungszentrum Jülich

12. 52425 Jülich

13. Germany

14. JARA – Fundamentals for Future Information Technology

Abstract

Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.

Funder

Hokkaido University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/FD/C8FD00112J

Reference47 articles.

1. Nanoionics-based resistive switching memories

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

4. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

5. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self‐Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices;Small;2023-07-14

2. Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications;Nanomaterials;2023-06-17

3. Resistive switching and role of interfaces in memristive devices based on amorphous NbO_x grown by anodic oxidation;Physical Chemistry Chemical Physics;2023

4. The Effect of Anodizing Bath Composition on the Electronic Properties of Anodic Ta-Nb Mixed Oxides;Nanomaterials;2022-12-14

5. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental study;ACS APPL MATER INTER;2022

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3