Resistive switching and role of interfaces in memristive devices based on amorphous NbO<sub><i>x</i></sub> grown by anodic oxidation-Reference-Cited by-同舟云学术

Resistive switching and role of interfaces in memristive devices based on amorphous NbO_x grown by anodic oxidation

Published:2023 Issue:21 Volume:25 Page:14766-14777
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Leonetti Giuseppe¹,Fretto Matteo²,Bejtka Katarzyna¹,Olivetti Elena Sonia²,Pirri Fabrizio Candido¹,De Leo Natascia²,Valov Ilia³⁴^ORCID,Milano Gianluca²^ORCID

Affiliation:

1. Politecnico di Torino, Department of Applied Science and Technology (DISAT), C.so Duca degli Abruzzi 24, 10129, Turin, Italy

2. Istituto Nazionale di Ricerca Metrologica (INRiM), Advanced Materials Metrology and Life Science, Strada delle cacce 91, 10135 Turin, Italy

3. Juelich, Institute of Electrochemistry and Energy System, Germany

4. Acad. Evgeni Budevski (IEE-BAS, Bulgarian Academy of Sciences (BAS), Acad. G. Bonchev Str., Block 10, 1113 Sofia, Bulgaria

Abstract

Performances of bipolar Au/NbOx/Nb devices were investigated by correlating the material properties of electrochemically grown NbOx with resistive switching functionalities.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

European Metrology Programme for Innovation and Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01160G

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5. Nanoionics-based resistive switching memories

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1. Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices;Scientific Reports;2023-10-09