Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device-Reference-Cited by-同舟云学术

Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

Published:2020 Issue:69 Volume:10 Page:42249-42255
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wu Xiaohan¹²³⁴^ORCID,Ge Ruijing¹²³⁴,Huang Yifu¹²³⁴^ORCID,Akinwande Deji¹²³⁴,Lee Jack C.¹²³⁴

Affiliation:

1. Microelectronics Research Center

2. The University of Texas at Austin

3. Austin

4. USA

Abstract

Constant voltage and current stress were applied on MoS₂ resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

Funder

National Science Foundation

Army Research Office

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA05209D

Reference37 articles.

1. Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

2. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

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4. Thinnest Nonvolatile Memory Based on Monolayer h‐BN

5. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

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