Programmable Retention Characteristics in MoS<sub>2</sub>-Based Atomristors for Neuromorphic and Reservoir Computing Systems-Reference-Cited by-同舟云学术

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Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Published:2024-05-20 Issue:22 Volume:18 Page:14327-14338
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Yoonseok¹²,Huang Yifu²,Chang Yao-Feng³^ORCID,Yang Sung Jin²^ORCID,Ignacio Nicholas D.²^ORCID,Kutagulla Shanmukh²^ORCID,Mohan Sivasakthya²^ORCID,Kim Sunghun¹,Lee Jungwoo¹,Akinwande Deji²^ORCID,Kim Sungjun¹^ORCID

Affiliation:

1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Seoul 04620, Korea

2. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States

3. Intel Corporation, Hillsboro, Oregon 97124, United States

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Division of Engineering Education and Centers

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c00333

Reference95 articles.

1. Controllable digital and analog resistive switching behavior of 2D layered WSe₂ nanosheets for neuromorphic computing

2. Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

3. Emulating Neuromorphic and In‐Memory Computing Utilizing Defect Engineering in 2D‐Layered WSeO_x and WSe₂ Thin Films by Plasma‐Assisted Selenization Process

4. Short-term memory characteristics in n-type-ZnO/p-type-NiO heterojunction synaptic devices for reservoir computing

5. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

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