Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process-Reference-Cited by-同舟云学术

Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process

Published:2020 Issue:21 Volume:8 Page:7120-7131
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Min Dae-Hong¹²³⁴,Ryu Tae-Hyun¹²³⁴,Yoon So-Jung¹²³⁴,Moon Seung-Eon⁵⁶⁴,Yoon Sung-Min¹²³⁴^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics

2. Kyung Hee University

3. Yongin

4. Korea

5. Electronics and Telecommunications Research Institute

6. Daejeon 34129

Abstract

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using Hf_xZr_1−xO₂ thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.

Funder

National Research Foundation of Korea

Electronics and Telecommunications Research Institute

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01105C

Reference45 articles.

1. Amorphous InGaZnO 4 Neuron Transistors with Temporal and Spatial Summation Function

2. Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate