Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate-Reference-Cited by-同舟云学术

Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate

Published:2020-01-06 Issue:1 Volume:116 Page:012102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liang Xiaoci¹,Li Zhenwen¹,Liu Ling¹,Chen Shujian¹,Wang Xinzhong²,Pei Yanli¹²^ORCID

Affiliation:

1. The State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China

2. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, People's Republic of China

Funder

the National Natural Science Foundation of China

Guangdong Provincial Department of Science and Technology

the Science and Technology Planning Projects of Guangzhou, China

Pengcheng Scholar funding

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120069

Reference23 articles.

1. Humidity-Dependent Synaptic Plasticity for Proton Gated Oxide Synaptic Transistor

2. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

3. Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks

4. Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors

5. Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

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