Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse-Reference-Cited by-同舟云学术

Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

Published:2018 Issue:73 Volume:8 Page:41884-41891
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Tan Tingting¹²³⁴⁵^ORCID,Du Yihang¹²³⁴⁵,Cao Ai¹²³⁴⁵,Sun Yaling¹²³⁴⁵,Zhang Hua¹²³⁴⁵,Zha Gangqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Solidification Processing

2. MIIT Key Laboratory of Radiation Detection Materials and Devices

3. School of Materials Science and Engineering

4. Northwestern Polytechnical University

5. Xi'an 710072

Abstract

In this work, HfO_x/HfO₂ homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated.

Funder

Northwestern Polytechnical University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06230G

Reference44 articles.

1. Nanoionics-based resistive switching memories

2. Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

3. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

4. Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

5. Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties

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