Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga+ and Ne+ etching of SiO2 in the presence of a XeF2 precursor gas-Reference-Cited by-同舟云学术

Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga+ and Ne+ etching of SiO2 in the presence of a XeF2 precursor gas

Published:2019 Issue:9 Volume:1 Page:3584-3596
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Mahady Kyle T.¹²³^ORCID,Tan Shida⁴⁵³,Greenzweig Yuval⁶⁷⁸,Raveh Amir⁶⁷⁸,Rack Philip D.¹²³⁹¹⁰^ORCID

Affiliation:

1. University of Tennessee

2. Knoxville

3. USA

4. Intel Corporation

5. Santa Clara

6. Intel Israel

7. Haifa 31015

8. Israel

9. Center for Nanophase Materials Science

10. Oak Ridge National Laboratory

Abstract

Successful development of a Monte Carlo simulation that accurately emulates gas assisted nanoscale focused ion beam etching.

Funder

Intel Corporation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NA/C9NA00390H

Reference41 articles.

1. An Introduction to the Helium Ion Microscope

2. Imaging and Nanofabrication With the Helium Ion Microscope of the Van Leeuwenhoek Laboratory in Delft

3. Helium ion microscopy of graphene: beam damage, image quality and edge contrast

4. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope

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