Termination of Ge surfaces with ultrathin GeS and GeS2 layers via solid-state sulfurization-Reference-Cited by-同舟云学术

Termination of Ge surfaces with ultrathin GeS and GeS2 layers via solid-state sulfurization

Author:

Chen Hui¹²³⁴⁵^ORCID,Keiser Courtney⁶²³⁴^ORCID,Du Shixuan⁵⁷⁸⁹^ORCID,Gao Hong-Jun⁵⁷⁸⁹^ORCID,Sutter Peter¹²³⁴^ORCID,Sutter Eli⁶²³⁴^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering

2. University of Nebraska-Lincoln

3. Lincoln

4. USA

5. Institute of Physics & University of Chinese Academy of Sciences

6. Department of Mechanical & Materials Engineering

7. Chinese Academy of Sciences

8. Beijing 100190

9. P. R. China

Abstract

Thermally activated solid-state reactions of germanium with sulfur give rise to passivating germanium sulfide surface layers.

Funder

Division of Materials Research

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference44 articles.

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