Chemisorption of sulfur on Ge(100)-Reference-Cited by-同舟云学术

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Chemisorption of sulfur on Ge(100)

Published:1988-01 Issue:1-2 Volume:201 Page:245-256
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Weser T.,Bogen A.,Konrad B.,Schnell R.D.,Schug C.A.,Moritz W.,Steinmann W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference31 articles.

1. Arsenic-terminated Ge(111): An ideal 1×1 surface

2. Surface and bulk electronic structure of Ge(111)c(2×8) and Ge(111):As 1×1

3. Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface

4. Surface core-level shifts for clean and halogen-covered Ge(100) and Ge(111)

5. High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous SiO2and the Si-SiO2Interface

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1. Coverage-dependent adsorption and stability of functionalized Ge(1 0 0) and (1 1 1) surfaces;Applied Surface Science;2022-01

2. Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3);Journal of Materials Chemistry C;2021

3. ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation;ECS Transactions;2019-12-17

4. Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

5. Reaction of aqueous ammonium sulfide on SiGe 25%;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-05

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