Phase control and lateral heterostructures of MoTe2 epitaxially grown on graphene/Ir(111)

Author:

Ripoll-Sau Joan12ORCID,Calleja Fabian1,Casado Aguilar Pablo12,Ibarburu Iván M.12,Vázquez de Parga Amadeo L.1234ORCID,Miranda Rodolfo1234,Garnica Manuela13ORCID

Affiliation:

1. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain

2. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain

3. Instituto “Nicolás Cabrera”, Universidad Autónoma de Madrid, 28049 Madrid, Spain

4. Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain

Abstract

Engineering the growth of the different phases of a MoTe2 single-layer in a decoupling substrate. The possibility to tune and combine different phases is a promising way to exploit the potential of MoTe2 since the phase determines its properties.

Funder

Ministerio de Ciencia e Innovación

Comunidad de Madrid

“la Caixa” Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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