Effective concentration ratio driven phase engineering of MBE-grown few-layer MoTe<sub>2</sub>-Reference-Cited by-同舟云学术

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Effective concentration ratio driven phase engineering of MBE-grown few-layer MoTe₂

Published:2024 Issue:32 Volume:16 Page:15381-15395
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Bhatt Kamlesh¹^ORCID,Kandar Santanu¹,Kumar Nand²,Kapoor Ashok¹,Singh Rajendra¹²³^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

2. School of Interdisciplinary Research (SIRe), Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

3. Department of Electrical Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

Abstract

A versatile phase engineering of 2H and 1T′ phases of MoTe2 on sapphire, which can be achieved independently using any of the growth parameters.

Funder

University Grants Commission

Ministry of Human Resource Development

Indian Institute of Technology Delhi

Department of Science & Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR00687A

Reference63 articles.

1. 2D transition metal dichalcogenides

2. Phase transitions in 2D materials

3. Exciton-Exciton Interaction beyond the Hydrogenic Picture in a MoSe2 Monolayer in the Strong Light-Matter Coupling Regime

4. Excitons in Bilayer MoS2 Displaying a Colossal Electric Field Splitting and Tunable Magnetic Response

5. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

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1. Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications;Sensors and Actuators A: Physical;2024-10

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