Heterocontact-Triggered 1H to 1T′ Phase Transition in CVD-Grown Monolayer MoTe<sub>2</sub>: Implications for Low Contact Resistance Electronic Devices-Reference-Cited by-同舟云学术

Heterocontact-Triggered 1H to 1T′ Phase Transition in CVD-Grown Monolayer MoTe₂: Implications for Low Contact Resistance Electronic Devices

Published:2023-07-06 Issue: Volume: Page:
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Khaustov Vladislav O.¹²^ORCID,Convertino Domenica¹^ORCID,Köster Janis³^ORCID,Zakharov Alexei A.⁴^ORCID,Mohn Michael J.³,Gebeyehu Zewdu M.¹⁵^ORCID,Martini Leonardo¹^ORCID,Pace Simona¹⁵^ORCID,Marini Giovanni⁵^ORCID,Calandra Matteo⁵⁶⁷^ORCID,Kaiser Ute³,Forti Stiven¹^ORCID,Coletti Camilla¹⁵^ORCID

Affiliation:

1. Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy

2. NEST, Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy

3. Central Facility for Electron Microscopy, Materials Science Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany

4. MAX IV Laboratory, Lund University, P.O. Box 118, Lund, S-22100, Sweden

5. Graphene Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy

6. Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy

7. Institut des Nanosciences de Paris, UMR7588, Sorbonne Université, CNRS, F-75252 Paris, France

Funder

Deutsche Forschungsgemeinschaft

Ministero dell'Università e della Ricerca

Graphene Flagship

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c01314

Reference70 articles.

1. Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

2. Tuning the phase stability of Mo-based TMD monolayers through coupled vacancy defects and lattice strain

3. Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy

4. MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering

5. Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals