Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx nanowires for high-mobility transistors-Reference-Cited by-同舟云学术

Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx nanowires for high-mobility transistors

Published:2020 Issue:38 Volume:8 Page:13189-13196
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yip SenPo¹²³⁴⁵,Li Dapan¹²³⁴,Li Fangzhou¹²³⁴,Wang Wei¹²³⁴,Kang Xiaolin¹²³⁴,Meng You¹²³⁴^ORCID,Zhang Heng¹²³⁴⁶,Lai Zhengxun¹²³⁴,Wang Fei¹²³⁴⁵,Ho Johnny C.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. City University of Hong Kong

3. Kowloon 999077

4. China

5. State Key Laboratory of Terahertz and Millimeter Waves

6. Shenzhen Research Institute

Abstract

Unusual phase-pure zinc blende and highly-crystalline As-rich InAs_1−xSb_x nanowires with x < 0.2 are successfully achieved for the fabrication of high-mobility transistors.

Funder

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02715D

Reference42 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. AlSb/InAs HEMT's for low-voltage, high-speed applications