Two-dimensional HfS<sub>2</sub>–ZrS<sub>2</sub> lateral heterojunction FETs with high rectification and photocurrent-Reference-Cited by-同舟云学术

Two-dimensional HfS₂–ZrS₂ lateral heterojunction FETs with high rectification and photocurrent

Published:2023 Issue:43 Volume:15 Page:17633-17641
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Lin¹²,Yuan Peize¹,Ma Zinan¹,He Mengjie¹,Jiang Yurong¹^ORCID,Wang Tianxing¹^ORCID,Xia Congxin¹^ORCID,Li Xueping¹³^ORCID

Affiliation:

1. School of Physics, Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, Henan 453007, China

2. College of Physics and Optoelectronic Engineering, Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou, 450007, China

3. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China

Abstract

The field effect transistor based on monolayer HfS2–ZrS2 lateral heterojunction provides an effective route to integrate rectifying and photodetection functions in single opto-electronic nanodevice.

Funder

Science and Technology Department of Henan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR03017B

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