Exploring optoelectronic and thermal properties of HfS2/ZrS2 heterojunction under mechanical strain, atomic doping and external electric field
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference72 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012
2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets;Chhowalla;Nat. Chem.,2013
3. The effects of strain on DC transverse and spin-valley Hall conductivity of ferromagnetic MoS2 and silicene;Yarmohammadi;J. Magn. Magn. Mater.,2017
4. Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics;Wu;Infomat,2021
5. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains;Johari;ACS Nano,2012
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