Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process-Reference-Cited by-同舟云学术

Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process

Published:2018 Issue:18 Volume:6 Page:4928-4935
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chung Jusung¹²³⁴,Tak Young Jun¹²³⁴,Kim Won-Gi¹²³⁴,Park Jeong Woo¹²³⁴,Kim Tae Sang⁵⁶⁷⁸⁴,Lim Jun Hyung⁵⁶⁷⁸⁴,Kim Hyun Jae¹²³⁴^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul 03722

4. Republic of Korea

5. Frontier Technology Team

6. Display Research Center

7. Samsung Display

8. Yongin-si

Abstract

We proposed a simple method, a thermally purified solution (TPS) process, to lower the fabrication temperature of solution-processed hafnium oxide (HfO_x) gate insulator films.

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00899J

Reference27 articles.

1. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

2. The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

3. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

4. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

5. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

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