A graphene/single GaAs nanowire Schottky junction photovoltaic device
Author:
Affiliation:
1. State Key Laboratory of Information Photonics and Optical Communications
2. Beijing University of Posts and Telecommunications
3. Beijing 100876
4. China
Abstract
A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices.
Funder
National Natural Science Foundation of China
Beijing University of Posts and Telecommunications
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR00158H
Reference45 articles.
1. Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays
2. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
3. GaN nanowire light emitting diodes based on templated and scalable nanowire growth process
4. A monolayer graphene/GaAs nanowire array Schottky junction self-powered photodetector
5. Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction
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