Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar cells by incorporating an InAlGaP hole reflector layer-Reference-Cited by-同舟云学术

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Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar cells by incorporating an InAlGaP hole reflector layer

Published:2024-08 Issue: Volume:564 Page:130630
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Shahnooshi Farzaneh,Orouji Ali A.^ORCID

Publisher

Elsevier BV

Reference45 articles.

1. Impacts of design configurations and movements of PV attached to building facades on increasing generated renewable energy;Reffat;Sol. Energy,2023

2. Proposed suitable electron reflector layer materials for thin-film CuIn1−xGaxSe2 solar cells;Sharbati;Opt. Mater.,2018

3. Improving the efficiency of CIGS solar cells using an optimized p-type CZTSSe electron reflector layer;Ahmadpanah;J. Mater. Sci. Mater. Electron.,2021

4. A computational study of carrier lifetime, doping concentration, and thickness of window layer for GaAs solar cell based on Al2O3 antireflection layer;Shah;Sol. Energy,2022

5. Numerical simulation of graphene/GaAs heterojunction solar cells;Yu;Sol. Energy,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology;Engineering Research Express;2024-07-11

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