The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation-Reference-Cited by-同舟云学术

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Published:2021 Issue:22 Volume:12 Page:7713-7719
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Park Jeong-Hwan¹²³⁴⁵,Yang Xu⁶²⁷⁴,Lee Jun-Yeob⁵⁸⁹¹⁰,Park Mun-Do⁵⁸⁹¹⁰,Bae Si-Young¹¹¹²¹³¹⁰,Pristovsek Markus⁶²⁷⁴,Amano Hiroshi⁶²⁷⁴,Lee Dong-Seon⁵⁸⁹¹⁰

Affiliation:

1. Department of Electronics

2. Nagoya University

3. Nagoya

4. Japan

5. School of Electrical Engineering and Computer Science (EECS)

6. Institute of Materials and Systems for Sustainability (IMaSS)

7. Nagoya 464-8601

8. Gwangju Institute of Science and Technology (GIST)

9. Gwangju 61005

10. Republic of Korea

11. Energy Materials Center

12. Korea Institute of Ceramic Engineering and Technology (KICET)

13. Jinju

Abstract

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material.

Funder

Nagoya University

Gwangju Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/SC/D1SC01642C

Reference53 articles.

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2. Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy

3. Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

4. Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

5. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

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