Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering
2. Sungkyunkwan University
3. Suwon
4. Republic of Korea
Abstract
The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC04094B
Reference48 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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