Electronic structure and optical property of metal-doped Ga2O3: a first principles study-Reference-Cited by-同舟云学术

Electronic structure and optical property of metal-doped Ga2O3: a first principles study

Published:2016 Issue:82 Volume:6 Page:78322-78334
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Tang Cheng¹²³⁴,Sun Jie¹²³⁴,Lin Na¹²³⁴,Jia Zhitai¹²³⁴⁵,Mu Wenxiang¹²³⁴,Tao Xutang¹²³⁴,Zhao Xian¹²³⁴

Affiliation:

1. State Key Laboratory of Crystal Materials

2. Shandong University

3. 250100 Jinan

4. PR China

5. State Key Laboratory of Optoelectronic Materials and Technologies

Abstract

A long list of main group and transition metals, even some lanthanides, have been examined based on first principles studies, to search for potential p-type dopants for β-Ga₂O₃.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA14010F

Reference57 articles.

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3. FPLAPW study of the structural, electronic, and optical properties of Ga2O3: Monoclinic and hexagonal phases

4. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

5. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

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