Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors-Reference-Cited by-同舟云学术

Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors

Published:2014 Issue:19 Volume:6 Page:11316-11321
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ding Li¹²³⁴,Zhang Zhiyong¹²³⁴,Su Jun⁵⁶⁷,Li Qunqing⁸⁹⁴,Peng Lian-Mao¹²³⁴

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices

2. Department of Electronics

3. Peking University

4. Beijing, P. R. China

5. Wuhan National Laboratory for Optoelectronics

6. Huazhong University of Science and Technology

7. Wuhan, P. R. China

8. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center

9. Tsinghua University

Abstract

Thin yttria films were investigated for use as gate dielectrics in carbon nanotube field-effect transistors (CNTFETs) with the gate length scaled down to sub-50 nm size.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR03475A

Reference34 articles.

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