Modeling and Simulation of Current Voltage Characteristics for Cylindrical CNTFET Transistor

Abstract

Abstract: In this study, we present a physics-based analytical model for the current-voltage characteristics of a near-ballistic CNTFET with a single-wall zig-zag carbon nanotube (16, 0). This model is based on the calculation of the potential and threshold voltage in the channel of a cylindrical gate CNTFET. Consequently, a new expression for the mobility law as a function of the CNT geometric parameters is proposed. Subsequently, a new model of I-V characteristics is presented, accounting for the impact of edge resistances. The paper also discusses the DIBL, subthreshold slope (SS), and the impact of some geometric and physical parameters on the drain current. A comparison of the I-V characteristics shows a good agreement between our model and the FETToy model. Keywords: Cylindrical gate CNTFET, I-V characteristics, Threshold voltage, Analytical model, Mobility law.