Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy-Reference-Cited by-同舟云学术

Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy

Published:2015 Issue:89 Volume:5 Page:73261-73267
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Shibin Krishna T. C.¹²³⁴,Aggarwal Neha¹²³⁴,Reddy G. Anurag¹²³⁴,Dugar Palak¹²³⁴,Mishra Monu¹²³⁴,Goswami Lalit¹²³⁴,Dilawar Nita⁵²³⁴,Kumar Mahesh¹²³⁴,Maurya K. K.⁶²³⁴,Gupta Govind¹²³⁴

Affiliation:

1. Physics of Energy Harvesting Division

2. CSIR-National Physical Laboratory

3. New Delhi-110012

4. India

5. Apex Level Standards & Industrial Metrology

6. Sophisticated and Analytical Instrumentation

Abstract

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (112̄0) sapphire substrate via rf-plasma molecular beam epitaxy.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA10099B

Reference38 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. When group-III nitrides go infrared: New properties and perspectives

3. Substrates for gallium nitride epitaxy

4. III–nitrides: Growth, characterization, and properties

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