Solution-processed high-performance p-channel copper tin sulfide thin-film transistors-Reference-Cited by-同舟云学术

Solution-processed high-performance p-channel copper tin sulfide thin-film transistors

Published:2021 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Mude Narendra Naik¹²³⁴⁵^ORCID,Bukke Ravindra Naik¹²³⁴⁵^ORCID,Jang Jin¹²³⁴⁵^ORCID

Affiliation:

1. Advanced Display Research Center

2. Department of Information Display

3. Kyung Hee University

4. Seoul 130-701

5. South Korea

Abstract

We introduce a solution-processed copper tin sulfide (CTS) thin film to realize high-performance of thin-film transistors (TFT) by optimizing the CTS precursor solution concentration.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01575C

Reference78 articles.

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2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

4. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

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