The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors-Reference-Cited by-同舟云学术

The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors

Published:2020 Issue:39 Volume:8 Page:13798-13810
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Reed Austin¹²³⁴,Stone Chandon¹²³⁴,Roh Kwangdong⁵⁶⁷⁴,Song Han Wook⁸⁹¹⁰¹¹,Wang Xingyu¹²¹³¹⁴⁴,Liu Mingyuan¹²¹³¹⁴⁴,Ko Dong-Kyun¹⁵¹⁶¹⁷⁴,No Kwangsoo¹⁸¹⁹²⁰¹¹,Lee Sunghwan¹²¹³¹⁴⁴^ORCID

Affiliation:

1. Department of Mechanical Engineering

2. Baylor University

3. Waco

4. USA

5. Department of Electrical Engineering

6. Princeton University

7. Princeton

8. Center for Mass and Related Quantities

9. Korea Research Institute of Standard and Science

10. Daejeon 34113

11. South Korea

12. School of Engineering Technology

13. Purdue University

14. West Lafayette

15. Department of Electrical and Computer Engineering

16. New Jersey Institute of Technology

17. Newark

18. Department of Materials Science and Engineering

19. KAIST

20. Daejeon 34141

Abstract

Amorphous InAlZnO demonstrates greater phase stability and carrier suppression capability while maintaining a high carrier mobility for high performance TFTs.

Funder

Purdue University

Purdue Research Foundation

Korea Research Institute of Standards and Science

National Research Foundation of Korea

Division of Electrical, Communications and Cyber Systems

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02655G