Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790187
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1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
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5. Intrinsicn-Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO
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