Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing-Reference-Cited by-同舟云学术

Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing

Published:2023-11-18 Issue:47 Volume:127 Page:23099-23108
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Moffitt Stephanie L.¹^ORCID,Cao Chuntian¹²^ORCID,Van Hest Maikel F. A. M.³^ORCID,Schelhas Laura T.¹³^ORCID,Steinrück Hans-Georg¹⁴^ORCID,Toney Michael F.¹⁵^ORCID

Affiliation:

1. SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

2. Computational Science Initiative, Brookhaven National Laboratory, Upton, New York 11973, United States

3. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

4. Department Chemie, Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany

5. Department of Chemical and Biological Engineering, Materials Science and Engineering Program, and the Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80309, United States

Funder

Bundesministerium f?r Bildung und Forschung

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c06410

Reference45 articles.

1. Metal oxide semiconductor thin-film transistors for flexible electronics

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Transparent Conducting Oxide Films for Various Applications: A Review

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors