Factors Determining the Resistive Switching Behavior of Transparent InGaZnO‐Based Memristors-Reference-Cited by-同舟云学术

Factors Determining the Resistive Switching Behavior of Transparent InGaZnO‐Based Memristors

Published:2022-06-03 Issue:7 Volume:16 Page:2200075
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Qin Fei¹,Zhang Yuxuan¹,Park Honghwi²,Kim Chung Soo³,Lee Dong Hun¹,Jiang Zhong-Tao⁴,Park Jeongmin³,No Kwangsoo⁵,Park Hongsik²,Song Han Wook⁶,Lee Sunghwan¹^ORCID

Affiliation:

1. School of Engineering Technology Purdue University West Lafayette IN 47907 USA

2. School of Electronic and Electrical Engineering Kyungpook National University Daegu 41566 Republic of Korea

3. Analysis Technical Center Korea Institute of Ceramic Engineering and Technology Jinju Gyeongsangnam-do 52851 Republic of Korea

4. College of Science, Health, Engineering and Education Murdoch University Murdoch WA 6150 Australia

5. Department of Materials Science and Engineering KAIST Daejeon 34141 Republic of Korea

6. Center for Mass and Related Quantities Korea Research Institute of Standard and Science Daejeon 34113 Republic of Korea

Funder

National Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200075

Reference82 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. How we predicted the memristor

4. Memristive devices for computing

5. Device and Circuit Architectures for In‐Memory Computing

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