Core structures and kink migrations of partial dislocations in 4H–SiC
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2007/FD/B603920K
Reference37 articles.
1. The emergence of semiconductors: Nineteenth century modern physics
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
4. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
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