Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis-Reference-Cited by-同舟云学术

Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

Published:2020 Issue:29 Volume:8 Page:10060-10070
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Abrenica Graniel Harne A.¹²³⁴⁵^ORCID,Lebedev Mikhail V.⁶⁷⁸^ORCID,Fingerle Mathias⁹¹⁰¹¹¹²^ORCID,Arnauts Sophia⁵³⁴,Bazzazian Nazaninsadat⁵³⁴,Calvet Wolfram⁹¹⁰¹¹¹²,Porret Clement⁵³⁴,Bender Hugo⁵³⁴,Mayer Thomas⁹¹⁰¹¹¹²^ORCID,de Gendt Stefan¹²³⁴⁵,van Dorp Dennis H.⁵³⁴

Affiliation:

1. Department of Chemistry

2. Katholieke Universiteit Leuven

3. B-3001 Leuven

4. Belgium

5. Imec

6. Ioffe Institute

7. St. Petersburg 194021

8. Russia

9. Institute of Materials Science

10. Darmstadt University of Technology

11. 64287 Darmstadt

12. Germany

Abstract

In this atomic-scale study on wet etching, the importance of surface chemistry, in particular the nature of the surface oxides, is demonstrated for technologically relevant group IV semiconductors, Ge and SiGe.

Funder

Horizon 2020 Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02763D

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