High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs-Reference-Cited by-同舟云学术

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Published:2011-05 Issue:1 Volume:59 Page:2-7
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Le Royer C.,Damlencourt J.-F.,Vincent B.,Romanjek K.,Le Cunff Y.,Grampeix H.,Mazzocchi V.,Carron V.,Némouchi F.,Hartmann J.-M.,Arvet C.,Vizioz C.,Tabone C.,Hutin L.,Batude P.,Vinet M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate;Feng;IEEE Electron Dev Lett,2006

2. Mitard J et al. Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. In: Proc VLSI Tech. Symp; 2009. p. 82–3.

3. High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate;Romanjek;Solid-State Electron,2009

4. Experimental evidence of sidewall enhanced transport properties of mesa-isolated (001) germanium-on-insulator pMOSFETs;Pouydebasque;IEEE Trans Electron Dev,2009

5. GeOI pMOSFETs scaled down to 30nm gate length with record off-state current;Hutin;IEEE Electron Dev Lett,2010

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