Regulation of oxygen vacancies in nitrogen-doped Ga<sub>2</sub>O<sub>3</sub> films for high-performance MSM solar-blind UV photodetectors-Reference-Cited by-同舟云学术

Regulation of oxygen vacancies in nitrogen-doped Ga₂O₃ films for high-performance MSM solar-blind UV photodetectors

Published:2023 Issue:18 Volume:11 Page:6202-6211
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Jinjin¹^ORCID,Ji Xueqiang¹^ORCID,Qi Song¹,Li Zhitong¹,Yan Zuyong²,Li Mengcheng¹,Yan Xu¹,Zhong Aoxue¹,Lu Chao¹,Qi Xiaohui¹,Li Peigang¹^ORCID

Affiliation:

1. School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. School of Science, Lanzhou University of Technology, Lanzhou 730050, China

Abstract

Nitrogen-doping in Ga2O3 films is proposed to decrease the concentration of oxygen vacancies and further improve the performance of solar-blind ultraviolet photodetectors.

Funder

National Natural Science Foundation of China

Beijing University of Posts and Telecommunications

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00345K

Reference67 articles.

1. Ultra‐Sensitive β‐Ga ₂ O ₃ Solar‐Blind Photodetector with High‐Density Al@Al ₂ O ₃ Core−Shell Nanoplasmonic Array