Current status and prospects of memristors based on novel 2D materials-Reference-Cited by-同舟云学术

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Current status and prospects of memristors based on novel 2D materials

Published:2020 Issue:6 Volume:7 Page:1495-1518
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhao Qianlong¹²³⁴⁵,Xie Zhongjian⁶⁷⁸⁹¹⁰,Peng Ya-Pei¹¹¹²¹³¹⁴,Wang Kaiyang¹²³⁴⁵,Wang Huide⁶⁷⁸⁹¹⁰,Li Xiangnan¹²³⁴⁵,Wang Hongwei¹²³⁴⁵,Chen Jingsheng¹⁵¹⁶¹⁷¹⁸^ORCID,Zhang Han⁶⁷⁸⁹¹⁰^ORCID,Yan Xiaobing¹²³⁴⁵^ORCID

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices

2. Key Laboratory of Digital Medical Engineering of Hebei Province

3. College of Electron and Information Engineering

4. Hebei University

5. Baoding 071002

6. Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics

7. SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology

8. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education

9. College of Physics and Optoelectronic Engineering

10. Shenzhen University

11. College of Health Science and Environmental Engineering

12. Shenzhen Technology University

13. Shenzhen

14. China

15. Department of Materials Science and Engineering

16. National University of Singapore

17. Singapore 117576

18. Singapore

Abstract

A summary of the characteristics and switching mechanisms of memristors based on novel 2D materials.

Funder

National Natural Science Foundation of China

Hebei University

Shenzhen Science and Technology Innovation Commission

Institute of Microelectronics of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/MH/C9MH02033K

Reference295 articles.

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2. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

3. Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

4. Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate

5. Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

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