Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate-Reference-Cited by-同舟云学术

Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate

Published:2018-11-26 Issue:22 Volume:113 Page:223501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xiao Zuoao¹,Zhao Jianhui¹,Lu Chao²,Zhou Zhenyu¹,Wang Hong¹,Zhang Lei¹,Wang Jingjuan¹,Li Xiaoyan¹,Wang Kaiyang¹,Zhao Qianlong¹,Pei Yifei¹,Qin Cuiya¹,Wang Gong¹,Li Hui¹,Guo Rui³,Chen Jingsheng³^ORCID,Ren Deliang¹,Yan Xiaobing¹³

Affiliation:

1. Key Laboratory of Digital Medical Engineering of Hebei Province, Key Laboratory of Optoelectronic Information Materials of Hebei Province, Research & Development Center of Machine Vision Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China

2. Electrical and Computer Engineering Department, Southern Illinois University Carbondale, Illinois, 1230 Lincoln Drive, Carbondale, Illinois 62901, USA

3. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore 117576

Funder

Institute of Baoding Nanyang Reserrch-New Material Technology Platform

Outstanding Youth Cultivation Project of Hebei University

Outstanding Youth Project of Hebei University

Project of Science and Technilogy activities for Overseas Researcher

Top-notch Younth Project of University in Hebei Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)