Studies on the reset power needed for the unipolar resistive switching in amorphous SrTiO3−δ films induced by electrical pulse
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
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1. Reconfigurable memristor based on SrTiO3 thin-film for neuromorphic computing;Frontiers of Physics;2023-07-11
2. Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices;Applied Physics Letters;2020-01-06
3. Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process;Journal of Asian Ceramic Societies;2019-06-08
4. Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate;Applied Physics Letters;2018-11-26
5. Bipolar transparent resistive switching based in a-IGZO/STO/a-IGZO structure for nonvolatile memory application;AIP Conference Proceedings;2017
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