Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices-Reference-Cited by-同舟云学术

Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices

Published:2020-01-06 Issue:1 Volume:116 Page:013506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Xiaobing¹²^ORCID,Xiao Zuoao¹,Lu Chao³

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China

2. Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore

3. Department of Electrical and Computer Engineering, Southern Illinois University Carbondale, Carbondale, Illinois 62901, USA

Funder

the National Natural Science Foundation of China

the Hundred Persons Plan of Hebei Province

the Outstanding Youth Project of Hebei Province

the Outstanding Youth Cultivation Project of Hebei University

the Project of Science and Technology Activities for Overseas Researcher

the Project of distinguished young of Hebei province

the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province

the Support Program for the Top Young Talents of Hebei Province

the Training and Introduction of High-level Innovative Talents of Hebei University