Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory-Reference-Cited by-同舟云学术

Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

Published:2017 Issue:42 Volume:5 Page:11046-11052
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yan Xiaobing¹²³⁴⁵^ORCID,Zhang Lei¹²³⁴⁵,Yang Yongqiang⁶⁷⁸⁹¹⁰,Zhou Zhenyu¹²³⁴⁵,Zhao Jianhui¹²³⁴⁵,Zhang Yuanyuan¹²³⁴⁵,Liu Qi¹¹¹²¹³¹⁰,Chen Jingsheng¹⁴¹⁵¹⁶

Affiliation:

1. College of Electron and Information Engineering

2. Key Laboratory of Digital Medical Engineering of Hebei Province

3. Key Laboratory of Optoelectronic Information Materials of Hebei Province

4. Hebei University

5. Baoding 071002

6. Jiangsu Province Special Equipment Safety Supervision and Inspection Institute

7. Branch of Wuxi

8. National Quality Supervision and Inspection Center of Graphene Products (Jiangsu)

9. Wuxi 2147174

10. P. R. China

11. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics

12. Chinese Academy of Sciences

13. Beijing 100029

14. Department of Materials Science and Engineering

15. National University of Singapore

16. Singapore

Abstract

Resistive memory (RRAM) based on a solid–electrolyte insulator is a type of critical nanoscale device with promising potential in non-volatile memory, analog circuits and neuromorphic synapse applications.

Funder

Natural Science Foundation of Hebei Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03037A

Reference56 articles.

1. Resistive switching in transition metal oxides

2. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories