Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T′-MoTe2 films-Reference-Cited by-同舟云学术

Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T′-MoTe2 films

Published:2018 Issue:42 Volume:10 Page:19906-19915
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Li¹²³⁴⁵,Wu Hao¹²³⁴⁵,Zhang Wenfeng¹²³⁴⁵^ORCID,Chen Zhenhua⁶⁷⁸⁹¹⁰,Li Jie¹²³⁴⁵,Lou Xun¹²³⁴⁵,Xie Zijian¹²³⁴⁵,Zhu Rui¹²³⁴⁵,Chang Haixin¹²³⁴⁵^ORCID

Affiliation:

1. Center for Joining and Electronic Packaging

2. State Key Laboratory of Material Processing and Die & Mould Technology

3. School of Materials Science and Engineering

4. Huazhong University of Science and Technology

5. Wuhan 430074

6. Shanghai Synchrotron Radiation Facility

7. Shanghai Institute of Applied Physics

8. Chinese Academy of Science

9. Shanghai 201204

10. People's Republic of China

Abstract

The instability concern for molybdenum- and tungsten-based transition-metal dichalcogenides (TMDCs) was clarified by anomalous oxidation dynamics and impact on electrical transport properties for the first time.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Ministry of Education of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR05699D

Reference52 articles.

1. MoS2 Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

2. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

3. Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

4. Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films

5. Tellurization Velocity-Dependent Metallic–Semiconducting–Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2

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