Tellurization Velocity-Dependent Metallic–Semiconducting–Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2-Reference-Cited by-同舟云学术

Tellurization Velocity-Dependent Metallic–Semiconducting–Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2

Published:2017-02-13 Issue:2 Volume:11 Page:1964-1972
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yang Li¹,Zhang Wenfeng¹^ORCID,Li Jie¹,Cheng Shuai¹,Xie Zijian¹,Chang Haixin¹^ORCID

Affiliation:

1. Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P.R. China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b08109

Reference66 articles.

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5. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils

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