Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils-Reference-Cited by-同舟云学术

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Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils

Published:2015-10-09 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Gao Yang,Liu Zhibo,Sun Dong-Ming,Huang Le,Ma Lai-Peng,Yin Li-Chang,Ma Teng,Zhang Zhiyong,Ma Xiu-Liang,Peng Lian-Mao,Cheng Hui-Ming,Ren Wencai

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms9569.pdf

Reference57 articles.

1. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

2. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

3. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).

4. Xiao, D., Liu, G. B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).

5. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 7, 494–498 (2012).

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